GATE 2023 Analog Circuits Quiz 54

A silicon n-MOSFET has W=10 μm and L = 1μm. The oxide thickness is 20 nm and the threshold voltage is 1V, the device is biased with a gate to source voltage of 3V and drain to source voltage of 5V. Assume that the mobility is 300 cm²/V_S. The MOSFET is biased in which region of operation?

A p-channel depletion mode MOSFET has the following parameters

= 0.5 mA/, = -2 V, if = 0, then current for = 1V in mA?

Consider the circuit shown,

It V_TN = 0.8V, Kn¹=30μA/v², if width to length ratios of M₁ and M₂ are then the output voltage V₀ is _____ V

For the transistor shown below, parameters are V_TH=1V and K_n =12.5µA/V^2. The Q-point (I_D, V_DS) is?

The voltage V_D (in V) for the given network shown below is.