Time Left - 15:00 mins
GATE 2023 Analog Circuits Quiz 54
Attempt now to get your rank among 13 students!
Question 1
A silicon n-MOSFET has W=10 μm and L = 1μm. The oxide thickness is 20 nm and the threshold voltage is 1V, the device is biased with a gate to source voltage of 3V and drain to source voltage of 5V. Assume that the mobility is 300 cm2/VS. The MOSFET is biased in which region of operation?
Question 2
Find the value of RD if
1) I DSS = 4mA
2) VP= -3 V
3) VDS=
1) I DSS = 4mA
2) VP= -3 V
3) VDS=
Question 3
A p-channel depletion mode MOSFET has the following parameters
= 0.5 mA/, = -2 V, if = 0, then current for = 1V in mA?
Question 4
Consider the circuit shown,
It VTN = 0.8V, Kn1=30μA/v2, if width to length ratios of M1 and M2 are then the output voltage V0 is _____ V
Question 5
For the transistor shown below, parameters are VTH=1V and Kn =12.5µA/V2. The Q-point (ID, VDS) is?
Question 6
The voltage VD (in V) for the given network shown below is.
- 13 attempts
- 0 upvotes
- 0 comments
Jun 30ESE & GATE EC