GATE 2022 Toppers Quiz 25

In an n–type semiconductor, the electron concentration (n_o) = 10¹⁵ cm^–3 and the intrinsic carrier concentration (n_i) is 10¹⁰ cm^–3. The mean life time of minority carriers is 10^–6 sec. The steady state excess hole concentration due to constant light illumination is d_{p = 4 × 10}⁵ cm^–3. The steady state electron – hole recombination rate is __________.

In the silicon BJT circuit shown below, assume that the emitter area of transistor Q₁ is one fourth that of transistor Q₂.

The value of current I0 is approximately

Consider a discrete-time signal

If y[n] is the convolution of x[n] with itself, the value of y[4] is _________.

Consider the two port network shown below

If then C₂ is _______ F.

A message m(t) band-limited to the frequency f_mhas a power of P_m. The power of the output signal in the following figure is

A medium is divided into two regions I and II about z = 0 plane as shown in the figure below.

In the interface carries surface current = (A/m)
and magnetic flux density in region II
=+
the magnetic flux density in region I, is given by