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GATE 2022 Toppers Quiz 15
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Question 1
In a TDMA /FDD based cellular system, each frame consists of eight time slots and each time slot contains 156.25 bits. if the data is transmitted at a rate of 270.833 kbps. Then the direction of a frame will be
Question 2
A white noise with a PSD of 2.510-8 W/Hz is applied to a low pass filter having =2.5. If the average output noise power is 0.1 W through a 1 resistor, the noise bandwidth is
Question 3
A piece of silicon is doped uniformly with phosphorous with a doping concentration 1016 /cm3. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is C. The conductivity (in S cm–1) of the silicon sample at 300 K is____
Hole and Electron Mobility in Silicon at 300 K
Doping concentration (cm–3)
Hole and Electron Mobility in Silicon at 300 K
Doping concentration (cm–3)
Question 4
The real part of an analytic function is x3 – 3xy2 + 3x2 – 3y2, then the imaginary part of the function will be
Question 5
A certain antenna with an efficiency of 95% has maximum radiation intensity of 0.5 W/sr. The input power is 0.4 W. The directivity of antenna (in dB) is …………………
Question 6
The differential signal (Vd) = 5 sin ωt (mV) and the common mode signal Vcm = 6V, find Vx?
Question 7
Given that a half-wave rectifier circuit driven from a transformer having a secondary voltage of 12.6 Vrms, f = 60 Hz with R = 15 Ω and C = 25 mF. Assume the diode on voltage Von = 1 V.
The value of the DC output voltage (Vo, dc) and value of ripple voltage is in volts is
Question 8
Given at room temperature the voltage equivalent of temperature VT = 26mv, hole mobility μp = 500 cm2 / V-sec and life time of hole is 130ns in a sample of n – type silicon bar that is exposed to radiation at one end at low injection level then what is the diffusion length of holes?
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ESE & GATE ECGeneralDec 27ESE & GATE EC