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Explain how a Potential barrier is developed in a p-n junction diode
By BYJU'S Exam Prep
Updated on: September 25th, 2023
A layer of electrons forms on the p-type side when holes flow in the direction of electrons, a layer of holes forms on the n-type side, and an area known as the depletion layer, in which this depletion layer is present, is generated. By creating a field that is perpendicular to how electrons are moving, this depletion layer prevents drifting. At the P-N junction, a potential barrier develops when the depletion layer stabilises.
- Since semiconductors’ grain boundaries prevent electrons from moving between them, the material must be doped with impurities.
- The doping procedure involves adding a pentavalent impurity to a tiny portion of a p-type semiconductor, changing that portion to a p-type semiconductor, and changing another portion to an n-type semiconductor by adding a trivalent impurity. The identical silicon material contains both n-type and P-type semiconductors.
- In the P-region there are lots of holes, while in the N-region there are lots of electrons.
- Diffusion and drift are a result of the creation of the p-n junction. The mixing of holes and electrons is called diffusion, while the collision of charges is known as drift.
- A layer of electrons forms on the p-type side when holes flow in the direction of electrons, a layer of holes forms on the n-type side, and an area known as the depletion layer, in which this depletion layer is present, is generated.
- This depletion layer creates a field that opposes the direction of the migration of the electrons, preventing the drifting process.
- At the P-N junction, a potential barrier develops when the depletion layer stabilises.
- The P-N junction diode and depletion layer schematic is shown below.
Summary:-
Explain how a Potential barrier is developed in a p-n junction diode
When holes move in the direction of electrons, a layer of electrons forms on the p-type side, a layer of holes forms on the n-type side, and an area called the depletion layer, in which this depletion layer is present, is produced. This depletion layer eliminates drifting by producing a field parallel to the direction of electron motion. When the depletion layer stabilises, a potential barrier forms at the P-N junction.
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