Explain how a Potential barrier is developed in a p-n junction diode

By K Balaji|Updated : November 13th, 2022

A layer of electrons forms on the p-type side when holes flow in the direction of electrons, a layer of holes forms on the n-type side, and an area known as the depletion layer, in which this depletion layer is present, is generated. By creating a field that is perpendicular to how electrons are moving, this depletion layer prevents drifting. At the P-N junction, a potential barrier develops when the depletion layer stabilises.

  1. Since semiconductors' grain boundaries prevent electrons from moving between them, the material must be "doped" with impurities.
  2. The doping procedure involves adding a pentavalent impurity to a tiny portion of a p-type semiconductor, changing that portion to a p-type semiconductor, and changing another portion to an n-type semiconductor by adding a trivalent impurity. The identical silicon material contains both n-type and P-type semiconductors.
  3. In the P-region there are lots of holes, while in the N-region there are lots of electrons.
  4. Diffusion and drift are a result of the creation of the p-n junction. The mixing of holes and electrons is called diffusion, while the collision of charges is known as drift.
  5. A layer of electrons forms on the p-type side when holes flow in the direction of electrons, a layer of holes forms on the n-type side, and an area known as the depletion layer, in which this depletion layer is present, is generated.
  6. This depletion layer creates a field that opposes the direction of the migration of the electrons, preventing the drifting process.
  7. At the P-N junction, a potential barrier develops when the depletion layer stabilises.
  8. The P-N junction diode and depletion layer schematic is shown below.

Explain how a Potential barrier is developed in a p-n junction diode

Summary:-

Explain how a Potential barrier is developed in a p-n junction diode

When holes move in the direction of electrons, a layer of electrons forms on the p-type side, a layer of holes forms on the n-type side, and an area called the depletion layer, in which this depletion layer is present, is produced. This depletion layer eliminates drifting by producing a field parallel to the direction of electron motion. When the depletion layer stabilises, a potential barrier forms at the P-N junction.

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