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ESE 2021 EE Technical Quiz -15 (App update required to attempt this test)
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Question 1
Which of the following have greatest percentage peak overshoot?
Question 2
Two silicon samples A and B both doped with 108 atoms/com3 but with boron and B with phosphorus. The ratio of electron to whole mobility is 4. The ratio of conductivity of the sample A to B is
Question 3
Statement I: One iteration of Newton raphson load flow method takes more time than gauss seidel method.
Statement II: The size of Jacobean is not constant in each all the iteration of Newton raphson load flow method.
Question 4
In an intrinsic semiconductor, the intrinsic carries concentration is given by which of the following
Question 5
The depletion capacitance, Cj of an abruptly p-n junction with constant doping of either side varies with reuses biased voltage VR as.
Question 6
Statement 1 : The net charge on an n-type extrinsic semiconductor is negative
Statement 2 : The conduction in n-type semiconductor is mostly due to electrons.
Question 7
The relationship between Fourier series coefficient Xk and Yk of signals x(n) and y(n) is Yk = (1 – (–1)k) Xk. Then which one of the following difference equations represents the relationship between x[n] and y[n]?
Question 8
In the p-type Ge sample, intrinsic carrier concentration and concentration of holes in the valance band is under thermal equilibrium condition. Then minority concentration in Ge sample is
Question 9
In a BJT, as the base width decreases. Which one of the following parameters will decrease?
Question 10
In emergency lighting system, the component used for maintaining the charge on the battery is
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ESE & GATE EEGeneralMar 24ESE & GATE EE