Barrier Potential of a P-N Junction Depends on

Answer: C. a, b and c.

The barrier potential of a P-N junction depends on the type of semiconductor material, amount of doping and temperature.

Solution:

If donor impurities are introduced into one side and acceptor impurities into the other side of a single crystal of a semiconductor (Si or Ge), a P-N junction is formed. Because there is a concentration gradient hole will initially diffuse to the right side of the junction and the electron to the left. We see that positive holes which neutralized the acceptor ions near the junction in the p-type semiconductor have disappeared as a result of recombination with electrons which have diffused across the junction. Similarly, neutralizing electrons in the n-type semiconductor have combined with holes which have crossed the junctions from the p-type material. Since the region of the junction is depleted of the mobile charges, it is called the depletion region. 

In the depletion region, a built-in electric field occurs and the integral of the electric field gives us the built-in potential across the junction which behaves like a barrier imposing restrictions on further diffusion of the charge carrier across the junction.

The built potential barrier of the P-N Junction is mathematically expressed as 

                                                      V_bi = (KT/q) ln (N_AN_D/n_i²).

Therefore, the Barrier potential of a P-N junction depends on the type of semiconductor material, amount of doping and temperature. Hence, Option (C) is the correct answer.

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