In an intrinsic semiconductor the conductivity is
In the p-type Ge sample, intrinsic carrier concentration and concentration of holes in the valance band is under thermal equilibrium condition. Then minority concentration in Ge sample is
In a BJT, as the base width decreases. Which one of the following parameters will decrease?
Consider the following statements regarding pinch off voltage (Vp
) of JFET
1. Vp depends on doping concentration of the channel.
2. Vp depends on channel width
3. Vp depends on channel length
Which of the following statements is/are correct?
What is the probability of finding an electron at fermi energy level?
In a tunnel diode, the width of the junction barrier is
The important fact about the collector current is:
The thermal voltage VT, of a semiconductor diode at 27 °C temperature is nearly
Thin oxide is not used in manufacturing of:
The monochrome monitor will display:
As the complexity of a packaged IC is increased:
Which of the following transistor is affected by static electricity: